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Journal and Selected Conference Proceedings

2026

• Z. Wang, K. Jiang, C. Wang, H. Zhou, L. Zheng, Z. Lin and M. Si*, “Boosting ALD In₂O₃ Transistor Performance Using Hybrid H₂O and O₃ Co-Reactant,” IEEE Trans. Electron Devices, 2026. PDF
• L. Zheng, Z. Wang, Z. Lin and M. Si*, “The Ballistic Injection in IGZO GAA VFET with Scaled Source/Drain Extension and Its Impact on On-Current Enhancement,” IEEE Electron Device Lett., 2026. PDF
• C. Wang, K. Jiang, J. Zhao, Z. Wang, G. Wang, C. Zhao and M. Si*, “Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm²/V∙s at Room Temperature,” IEEE Electron Device Lett., 2026. PDF
• J. Zhao, Z. Lin, Z. Wang, L. Zheng, K. Jiang, H. Zhao, M. Si*, “Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors,” Adv. Electron. Mater., vol. 12, no. 8, p. e70343, 2026. PDF
• J. Li, L. Zheng, P. Hong, C. Ye, H. Liu, M. Si, X. Miao, X. Li, “High‐Stability Ultrathin Oxide Transistors via Defect Engineering for High‐Performance Capacitorless DRAM,” Adv. Funct. Mater., vol. 36, no. 23, p. e14194, 2026. PDF
• H. Chen, Y. Ning, Y. Chen, J. Yan, J. Chen, L. Liu, Y. Long, S. Zhang, K. Liu, M. Chen, J. Zhao, M. Si, X. Zhang, Y. Zhang, D. Xiang, L. Wang, “Electrically Tunable WSe₂/α-In₂Se₃ van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and Neuromorphic Computing,” ACS Appl. Mater. Interfaces, vol. 18, no. 8, pp. 12828-12837, 2026. PDF

2025

• Z. Yao, D. Chen, M. Si, L. Wang, X. Guo, J. Liu, W. Tang, X. Li, “Dual-gate Ion-Sensitive Ferroelectric Field-Effect Transistor with Ultra-High Sensitivity > 1000 mV/pH and Low Operation Voltage < 3 V,” in 2025 IEEE International Electron Devices Meeting (IEDM), 2025. PDF
• T. K. Paul, M. Si, P. D. Ye, and S. K. Gupta, “Physics-Based Compact Model of Ferroelectric Semiconductor Field Effect Transistors,” in 2025 IEEE International Electron Devices Meeting (IEDM), 2025. PDF
• Y. Fan, W. Li, J. Liu, D. Chen, X. Ma, T. Cui, Z. Lin, M. Si, J. Liu, G. Liu, B. Tian, X. Li, “Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing,” Appl. Phys. Lett., vol. 127, no. 22, p. 223303, 2025. PDF
• H. Zhou, M. Zhou, M. Xiang, H. Gong, G. Gao, C. Wang, Y. Zhang, K. Dang, Z. Liu, J. Zhang, H. Zhang, Y. Wang, H. Wang, M. Si, Y. Zhang, Y. Hao, J. Zhang, “Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices,” Sci. Adv., vol. 11, no. 47, p. eadw6167, 2025. PDF
• S. Park, J. Yoo, S. Oh, H. Lee, M. Park, S. Lim, S. Kim, S. Jung, B. Kim, K. Heo, T. Moon, T. Kim, M. Si, P. D. Ye, H. Bae, “Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application,” Mater. Sci. Semicond. Process., vol. 201, p. 110104, 2025. PDF
• C. Wang, L. Liao, K. Jiang, Z. Wang, J. Zhao, G. Zhou and M. Si*, “On the Accurate Evaluation of Intrinsic Electron Mobility on Oxide Semiconductor Transistors,” IEEE Electron Device Lett., vol. 46, no. 11, pp. 2177-2180, 2025. PDF
• D. Chen, Y. Dong, T. Cui, Z. Xue, Z. Yao, Q. Gao, R. Wang, Y. Fan, J. Liu, X. Zhang, Z. Wang, W. Li*, J. Chu, M. Si*, X. Li*, “Unveiling the polarization switching pathway through tetragonal phase as a metastable intermediate state in ferroelectric Hf_xZr_1-xO₂ thin film,” Nat. Commun., vol. 16, no. 1, p. 8188, 2025. PDF
• Z. Yao, D. Chen, T. Cui, Y. Dong, Z. Lin, J. Liu, M. Si*, X. Li*, “Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor,” IEEE Trans. Electron Devices, vol. 72, no. 9, pp. 4872-4877, 2025. PDF
• K. Jiang, Z. Wang, Z. Lin, Z. Chen, J. Zhao, L. Zheng, C. Wang, S. Li, S.-T. Zhang, D. Li, X. Li, X. Guo* and M. Si*, “Top-Gate Atomic-Layer-Deposited Oxide Semiconductor Transistors with Large Memory Window and Non-Ferroelectric HfO₂ Gate Stack,” IEEE Electron Device Lett., vol. 46, no. 8, pp. 1353-1356, 2025. PDF
• J. Zhao, Z. Lin, C. Wang, X. Cai, J. Yu, L. Kang, Y. Wu, J. Xu, M. Si*, “Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6×10¹³/cm²,” J. Vac. Sci. Technol. A, vol. 43, no. 4, p. 043409, 2025. PDF
• Q. Liu, Y. Li, L. Liu, H. Jiang, H. Zhu, Z. Chen, Y. Yang, M. Si, C. Li, P. Lin, Y. Wei, Q. Liu, “High-density, nonvolatile SRAM using monolithic 3D integration of InGaZnO thin-film transistors and Hf_0.5Zr_0.5O₂-based ferroelectric capacitors,” Device, vol. 3, p. 100833, 2025. PDF
• Z. Lin†, L. Kang†, J. Zhao, C. Wang, P. Hong, K. Jiang, S. Lu, Z. Wang, H. Wang, X. Li, X. Li, Y. Wu*, J. Xu, M. Si*, “The Critical Role of Passivation Layer and Semiconductor Interface on the Hydrogen Stability of ALD IGZO Transistors,” IEEE Trans. Electron Devices, vol. 72, no. 8, pp. 4138-4142, 2025. PDF
• Y. Fan, S. Zhang, Z. Xue, Y. Dong, D. Chen, J. Zhang, J. Liu, M. Si, C. Luo, W. Li, J. Chu, Y. Cao, Z. Wang, X. Li, “Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf_0.5Zr_0.5O₂ films,” Nat. Commun., vol. 16, p. 4232, 2025. PDF
• Z. Lin, L. Kang, Y. Zhang, S. Lu, T. Cui, L. Zheng, J. Zhao, X. Li, X. Zhao, Y. Wu*, J. Xu, M. Si*, “First Direct Observation of Two Different Hydrogen-Related Processes Corresponding to the Negative V_TH Shift under PBTI Stress in IGZO Transistors by Pd Hydrogen Spillover,” in 2025 IEEE Symposium on VLSI Technology (VLSI), 2025. PDF
• H. Zhou, K. Zhang, P. Hong, M. Zhou, G. Gao, M. Xiang, Z. Liu, X. Li*, M. Si*, Y. Hao, and J. Zhang*, “First Demonstration of Top T-gate BEOL-Compatible Indium-Oxide RF Transistors with Record Maximum Oscillation Frequency of 70 GHz,” in 2025 IEEE Symposium on VLSI Technology (VLSI), 2025. PDF
• L. Zheng, L. Xing, Z. Lin, W. Zhao, Y. Fan, Y. Dong, Z. Wang, S. Li, X. Li, Y. Wu*, J. Xu, M. Si*, “Are There High-Density Deep States in Atomic-Layer-Deposited IGZO Thin Film,” Nano Lett., vol. 25, no. 14, pp. 5974-5980, 2025. PDF
• Y. Sun, S. Zhang, Q. Liu, Y. Li, H. Lu, X. Zhang, Y. Wei, M. Si, H. Jiang, Q. Liu, “Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf_0.5Zr_0.5O₂-Based Ferroelectric Capacitors,” IEEE Trans. Electron Devices, vol. 72, no. 3, pp. 1097-1103, 2025. PDF
• Z. Wang, J. Zhao, K. Jiang, Y. Li, Z. Chen, C. Wang, G. Yi, K. Cai, Z. Lin, L. Zheng, T. Cui, X. Li, X. Ma, G. Wang, C. Zhao, A. Nathan, J. Yu*, M. Si*, “In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition with High Field-Effect Mobility,” IEEE Electron Device Lett., vol. 46, no. 3, pp. 412-415, 2025. PDF

2024

• T. Cui, Z. Xue, D. Chen, Y. Fan, J. Liu, M. Si, X. Li, “A metastable temperature-strain phase diagram of Hf_xZr_1-xO₂ thin films based on synchrotron-based in situ 2D GIXRD investigation,” Appl. Phys. Lett., vol. 125, p. 252903, 2024. PDF
• T. Zhang, Y. Fan, Z. Xue, M. Si, Z. Wang, X. Li, Y. Cao, “Coherent epitaxy of Hf_xZr_1-xO₂ thin films by high-pressure magnetron sputtering,” Materials Today Electronics, vol. 10, p. 100124, 2024. PDF
• L. Zheng, Z. Wang, Z. Lin, M. Si*, “First Demonstration on the Transient Writing Characteristics of Multi-bit ALD IGZO 2T0C DRAM by Fast I-V Measurement,” in 2024 IEEE International Electron Devices Meeting (IEDM), p. 6-4, 2024. PDF
• Y. Huang†, L. Zheng†, Z. Wang, Z. Lin, C. Zhang, M. Si*, X. Guo*, “Area-and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C eDRAM With Cell-System Co-Optimization,” IEEE Trans. Electron Devices, vol. 71, no. 9, pp. 5319-5324, 2024. PDF
• Z. Wang, L. Zheng, Z. Lin, J. Zhao, W. Tang, L. Feng, Z. Liu, X. Li, X. Guo, M. Si*, “CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration,” IEEE Trans. Electron Devices, vol. 71, no. 8, pp. 4664-4669, 2024. PDF
• T. Hu, X. Sun, M. Bai, X. Jia, S. Dai, T. Li, R. Han, Y. Ding, H. Fan, Y. Zhao, J. Chai, H. Xu, M. Si, X. Wang, W. Wang, “Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf_0.5Zr_0.5O₂,” IEEE Electron Device Lett., vol. 45, no. 5, pp. 825-828, 2024. PDF
• Z. Lin†, L. Kang†, J. Zhao, Y. Yin, Z. Wang, J. Yu, Y. Li, G. Yi, A. Nathan, X. Li, Y. Wu*, J. Xu, M. Si*, “The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization,” IEEE Trans. Electron Devices, vol. 71, no. 5, pp. 3002-3008, 2024. PDF
• C. Niu, Z. Lin, V. Askarpour, Z. Zhang, P. Tan, M. Si, Z. Shang, Y. Zhang, H. Wang, M. S. Lundstrom, J. Maassen, P. D. Ye, “Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 71, no. 5, pp. 3403-3410, 2024. PDF
• T. Cui, D. Chen, Y. Dong, Y. Fan, Z. Yao, H. Duan, J. Liu, G. Liu, M. Si*, X. Li*, “Can interface layer be really free for Hf_xZr_1-xO₂ based ferroelectric field-effect transistors with oxide semiconductor channel?” IEEE Electron Device Lett., vol. 45, no. 3, pp. 368-371, 2024. PDF

2023

• M. Zhou, H. Zhou, S. Huang, M. Si, Y. Zhang, T. Luan, H. Yue, K. Dang, C. Wang, Z. Liu, J. Zhang, Y. Hao, “1.1 A/mm β-Ga₂O₃-on-SiC RF MOSFETs with 2.3 W/mm P_out and 30% PAE at 2 GHz and f_T/f_max of 27.6/57 GHz,” in 2023 IEEE International Electron Devices Meeting (IEDM), p. 38-4, 2023. PDF
• C. Niu, Z. Lin, Z. Zhang, P. Tan, M. Si, Z. Shang, Y. Zhang, H. Wang, P. D. Ye, “Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In₂O₃ TFTs Reaching the Quantum Limit,” in 2023 IEEE International Electron Devices Meeting (IEDM), p. 37-2, 2023. PDF
• A. Charnas, Z. Zhang, Z. Lin, D. Zheng, J. Zhang, M. Si, P. D. Ye, “Extremely Thin Amorphous Indium Oxide Transistors,” Adv. Mater., vol. 36, no. 9, p. 2304044, 2023. PDF
• Y. Dong, T. Cui, D. Chen, J. Liu, M. Si, X. Li, “The impact of intrinsic RC coupling with domains flipping on polarization switching time of Hf_xZr_1-xO₂ ferroelectric capacitor,” Appl. Phys. Lett., vol. 44, no. 9, pp. 1480-1483, 2023. PDF
• L. Zheng, Z. Wang, Z. Lin, and M. Si*, “The Impact of Parasitic Capacitance on the Memory Characteristics of 2T0C DRAM and New Writing Strategy,” IEEE Electron Device Lett., vol. 44, no. 8, pp. 1284-1287, 2023. PDF
• D. Chen, S. Zhong, Y. Dong, T. Cui, J. Liu, M. Si, X. Li, “Correlation between crystal phase composition, wake-up effect, and endurance performance in ferroelectric Hf_xZr_1-xO₂ thin films,” Appl. Phys. Lett., vol. 122, p. 212903, 2023. PDF
• Z. Zhang, Z. Lin, C. Niu, M. Si, M. A. Alam and P. D. Ye, “Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing,” in 2023 IEEE Symposium on VLSI Technology (VLSI), p. T11-3, 2023. PDF
• Z. Lin, J. Zhao, X. Li, L. Kang, J. Li, Y. Wu, J. Xu, and M. Si*, “Universal PBTI Relaxation on the Negative V_TH Shift in Oxide Semiconductor Transistors and New Insights,” IEEE Electron Device Lett., vol. 44, no. 7, pp. 1136-1139, 2023. PDF
• E. Yu, X. Lyu, M. Si, P. D. Ye, and K. Roy, “Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness,” IEEE Trans. Electron Devices, vol. 70, no. 6, pp. 2962-2969, 2023. PDF
• P.-Y. Liao, D. Zheng, S. Alajlouni, Z. Zhang, M. Si, Z. Zhang, J.-Y. Lin, T. I. Feygelson, M. J. Tadjer, A. Shakouri, and P. D. Ye, “Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration,” IEEE Trans. Electron Devices, vol. 70, no. 4, pp. 2052-2058, 2023. PDF
• Z. Lin, Z. Wang, J. Zhao, X. Li, and M. Si*, “A Low-Leakage Zinc Oxide Transistor by Atomic Layer Deposition,” IEEE Electron Device Lett., vol. 44, no. 3, pp. 536-539, 2023. PDF

2022

• Z. Lin, M. Si, V. Askarpour, C. Niu, A. Charnas, Z. Shang, Y. Zhang, Y. Hu, Z. Zhang, P.-Y. Liao, K. Cho, H. Wang, M. Lundstrom, J. Maassen, and P. D. Ye, “Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current,” ACS Nano, vol. 16, no. 12, pp. 21536-21545, 2022. PDF
• P.-Y. Liao, K. Khot, S. Alajlouni, M. Snure, J. Noh, M. Si, Z. Zhang, A. Shakouri, X. Ruan, and P. D. Ye, “Alleviation of Self-Heating Effect in Top-Gated Ultrathin In₂O₃ FETs Using a Thermal Adhesion Layer,” IEEE Trans. Electron Devices, vol. 70, no. 1, pp. 113-120, 2022. PDF
• D. Chen, S. Zhong, Y. Dong, T. Cui, J. Liu, M. Si, X. Li, “Antiferroelectric Phase Evolution in Hf_xZr_1-xO₂ Thin Film toward High Endurance of Non-volatile Memory Devices,” IEEE Electron Device Lett., vol. 43, no. 12, pp. 2065-2068, 2022. PDF
• Z. Zhang, Z. Lin, P.-Y. Liao, V. Askarpour, H. Dou, Z. Shang, A. Charnas, M. Si, S. Alajlouni, A. Shakouri, H. Wang, M. Lundstrom, J. Maassen, and P. D. Ye, “A Gate-All-Around In₂O₃ Nanoribbon FET with Near 20 mA/µm Drain Current,” IEEE Electron Device Lett., vol. 43, no. 11, pp. 1905-1908, 2022. PDF
• P.-Y. Liao, S. Alajlouni, Z. Zhang, Z. Lin, M. Si, J. Noh, T. I. Feygelson, M. J. Tadjer, A. Shakouri, and P. D. Ye, “Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond,” in 2022 IEEE International Electron Devices Meeting (IEDM), 2022, pp. 286-289. PDF
• D. Zheng, A. Charnas, J. Anderson, H. Dou, Z. Hu, Z. Lin, Z. Zhang, J. Zhang, P.-Y. Liao, M. Si, H. Wang, D. Weinstein and P. D. Ye, “First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability,” in 2022 IEEE International Electron Devices Meeting (IEDM), 2022, pp. 78-81. PDF
• Z. Zhang, Z. Lin, A. Charnas, H. Dou, Z. Shang, J. Zhang, M. Si, H. Wang, M. A. Alam and Peide D. Ye, “Reliability of Atomic-Layer-Deposited Gate-All-Around In₂O₃ Nano-Ribbon Transistors with Ultra-High Drain Currents,” in 2022 IEEE International Electron Devices Meeting (IEDM), 2022, pp. 703-706. PDF
• W. Tang, Z. Lin, Z. Wang, Z. Lin, L. Feng, Z. Liu, X. Li, P. D. Ye, X. Guo*, M. Si*, “Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In₂O₃ n-FET and Polycrystalline Si p-FET: Achieving Large Noise Margin and High Voltage Gain of 134 V/V,” in 2022 IEEE International Electron Devices Meeting (IEDM), 2022, pp. 483-486. PDF
• A. Charnas, M. Si, Z. Lin, and P. D. Ye, “Improved Stability with Atomic-Layer-Deposited Encapsulation on Atomic-Layer In₂O₃ Transistors by Reliability Characterization,” IEEE Trans. Electron Devices, vol. 69, no. 10, pp. 5549-5555, 2022. PDF
• D. Zheng, M. Si, S.-C. Chang, N. Haratipour, Z. Chen, A. Charnas, S. Huang, K. Wang, L. Dou, X. Xu, U. E. Avci, and P. D. Ye, “Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions,” J. Appl. Phys., vol. 132, p. 054101, 2022. PDF
• J. Zhang, P. Dong, K. Dang, Y. Zhang, Q. Yan, H. Xiang, J. Su, Z. Liu, M. Si, J. Gao, M. Kong, H. Zhou, and Y. Hao, “Ultra-wide bandgap semiconductor Ga₂O₃ power diodes,” Nat. Commun., vol. 13, p. 3900, 2022. PDF
• Z. Zhang, Z. Lin, M. Si, D. Zhang, H. Dou, Z. Chen, A. Charnas, H. Wang, and P. D. Ye, “Vertically stacked multilayer atomic-layer-deposited sub-1-nm In₂O₃ field-effect transistors with back-end-of-line compatibility,” Appl. Phys. Lett., vol. 120, no. 20, p. 202104, 2022. PDF
• Z. Wang, Z. Lin, M. Si*, and P. D. Ye*, “Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO₂/In₂O₃ Gate Stack by C-V and Conductance Method,” Front. Mater., vol. 9, p. 850451, 2022. PDF
• X. Lyu, P. R. Shrestha, M. Si, P. Wang, J. Li, K. P. Cheung, S. Yu, and P. D. Ye, “Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide,” in 2022 IEEE Symposium on VLSI Technology (VLSI), 2022, pp. 338-339. PDF
• Z. Lin, M. Si, and P. D. Ye, “Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In₂O₃ Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10⁹ Cycles without V_T Drift Penalty,” in 2022 IEEE Symposium on VLSI Technology (VLSI), 2022, pp. 391-392. PDF
• P.-Y. Liao, S. Alajlouni, M. Si, Z. Zhang, Z. Lin, J. Noh, C. Wilk, A. Shakouri, and P. D. Ye, “Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In₂O₃ FETs,” in 2022 IEEE Symposium on VLSI Technology (VLSI), 2022, pp. 322-323. PDF
• M. Si, Z. Lin, Z. Chen, X. Sun, H. Wang, and P. D. Ye, “Scaled indium oxide transistors fabricated using atomic layer deposition,” Nat. Electron., vol. 5, no. 3, pp. 164-170, 2022. PDF Supplement
• J. Noh, P. R. Chowdhury, M. Segovia, S. Alajlouni, M. Si, A. R. Charnas, S. Huang, K. Maize, A. Shakouri, X. Xu, X. Ruan, P. D. Ye, “Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer,” IEEE Trans. Electron Devices, vol. 69, no. 3, pp. 1186-1190, 2022. PDF
• S. Neumayer, M. Si, J. Li, P.-Y. Liao, L. Tao, A. O'Hara, S. Pantelides, P. D. Ye, P. Maksymovych, and N. Balke, “Ionic control over ferroelectricity in 2D layered van der Waals capacitors,” ACS Appl. Mater. Interfaces, vol. 14, no. 2, pp. 3018-3026, 2022. PDF

2021

• D. Zheng, W. Chung, Z. Chen, M. Si, C. Wilk, and P. D. Ye, “Controlling Threshold Voltage of CMOS SOI Nanowire FETs with Sub-1nm Dipole Layers formed by Atomic Layer Deposition,” IEEE Trans. Electron Devices, vol. 69, no. 2, pp. 851-856, 2022. PDF
• Y.-P. Chen, M. Si, B. Kishore Mahajan, Z. Lin, P. D. Ye and M. A. Alam, “Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-thick, In₂O₃ Thin-Film Transistors,” IEEE Electron Device Lett., vol. 43, no. 2, pp. 232-235, 2022. PDF
• H. Bae, T. J. Park, J. Noh, W. Chung, M. Si, S. Ramanathan, and P. D. Ye, “First Demonstration of Robust Tri-Gate β-Ga₂O₃ Nano-membrane Field-Effect Transistors,” Nanotechnology, vol. 33, no. 12, p. 125201, 2022. PDF
• Z. Zhang, Y. Hu, Z. Lin, M. Si, A. Charnas, K. Cho, and P. D. Ye, “Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition,” IEEE Trans. Electron Devices, vol. 69, no. 1, pp. 231-236, 2022. PDF
• P.-Y. Liao, M. Si, Z. Zhang, Z. Lin, and P. D. Ye, “Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering,” IEEE Trans. Electron Devices, vol. 69, no. 1, pp. 147-151, 2022. PDF
• E. Yu, A. Agrawal, D. Zheng, M. Si, M. Koo, P. D. Ye, S. K. Gupta, and K. Roy, “Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection,” IEEE Electron Device Lett., vol. 42, no. 11, pp. 1670-1673, 2021. PDF
• Z. Lin, M. Si, Y.-C. Luo, X. Lyu, A. Charnas, Z. Chen, Z. Yu, W. Tsai, P. C. McIntyre, R. Kanjolia, M. Moinpour, S. Yu, P. D. Ye, “High-Peformance BEOL-Compatible Atomic-Layer-Deposited In₂O₃ Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 10⁸ Cycles,” in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 386-389. PDF
• R. Kudoru, A. K. Saha, M. Si, X. Lyu, P. D. Ye, and S. K. Gupta, “Variation and Stochasticity in Polycrystalline HZO based MFIM: Grain-Growth Coupled 3D Phase Field Model based Analysis,” in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 330-333. PDF
• M. Si, H.-Y. Cheng, T. Ando, G. Hu, and Peide D. Ye, “Overview and Outlook of Emerging Non-Volatile Memories,” MRS Bulletin, vol. 46, pp. 1-13, 2021. PDF
• A. K. Saha, M. Si, P. D. Ye, and S. K. Gupta, “Multi-domain Polarization Switching in HZO-Dielectric Stack: The Role of Dielectric Thickness,” Appl. Phys. Lett., vol. 119, p. 122903, 2021. PDF
• C. Niu, G. Qiu, Y. Wang, M. Si, W. Wu, and Peide D. Ye, “Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well,” Nano Lett., vol. 21, no. 18, pp. 7527-7533, 2021. PDF
• M. Si and Peide D. Ye, “The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors,” IEEE Trans. Electron Devices, vol. 68, no. 10, pp. 5108-5113, 2021. PDF
• M. Si, Z. Lin, Z. Chen, and Peide D. Ye, “High-Performance Atomic-Layer-Deposited Indium Oxide 3D Transistors and Integrated Circuits for Monolithic 3D Integration,” IEEE Trans. Electron Devices, vol. 68, no. 12, pp. 6605-6609, 2021. PDF
• Z. Lin, M. Si, X. Lyu, and P. D. Ye, “High-Performance In₂O₃-Based 1T1R FET for BEOL Memory Application,” IEEE Trans. Electron Devices, vol. 68, no. 8, pp. 3775-3779, 2021. PDF
• H. Bae, A. Charnas, W. Chung, M. Si, X. Lyu, X. Sun, J. Park, H. Wang, D. Zemlyanov, and P. D. Ye, “Ultrathin Transparent Copper(I) Oxide Films Grown by Plasma-Enhanced Atomic Layer Deposition for Back-end-of-line p-Type Transistors,” Nano Express, vol. 2, no. 2, p. 020023, 2021. PDF
• M. Si, Z. Lin, Z. Chen, and P. D. Ye, “First Demonstration of Atomic-Layer-Deposited BEOL-Compatible In₂O₃ 3D Fin Transistors and Integrated Circuits: High Mobility of 113 cm²/V·s, Maximum Drain Current of 2.5 mA/µm and Maximum Voltage Gain of 38 V/V in In₂O₃ Inverter,” in 2021 IEEE Symposium on VLSI Technology (VLSI), p. T2-4, 2021. PDF
• J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu, and P. D. Ye, “First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High Temperature Environment,” IEEE Trans. Electron Devices, vol. 68, no. 5, pp. 2515-2521, 2021. PDF
• M. Si, Z. Zhang, S.-C. Chang, N. Haratipour, D. Zheng, J. Li, U. E. Avci, and Peide D. Ye, “Asymmetric Metal/α-In₂Se₃/Si Crossbar Ferroelectric Semiconductor Junction,” ACS Nano, vol. 15, no. 3, pp. 5689-5695, 2021. PDF
• M. Si, A. Murray, Z. Lin, J. Andler, J. Li, J. Noh, S. Alajlouni, C. Niu, X. Lyu, D. Zheng, K. Maize, A. Shakouri, S. Datta, R. Agrawal, and Peide D. Ye, “BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultra-High-Density 2D Electron Gas over 0.8×10¹⁴ /cm³ at Oxide/Oxide Interface by the Change of Ferroelectric Polarization,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3195-3199, 2021. PDF
• J. Li, M. Si, Y. Qu, X. Lyu, and P. D. Ye, “Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements,” IEEE Trans. Electron Devices, vol. 68, no. 3, pp. 1214-1220, 2021. PDF
• A. Charnas, M. Si, Z. Lin, and P. D. Ye, “Enhancement-Mode Atomic-Layer Thin In₂O₃ Transistors with Maximum Current Exceeding 2 A/mm at Drain Voltage of 0.7 V Enabled by Oxygen Plasma Treatment,” Appl. Phys. Lett., vol. 118, p. 025107, 2021. PDF
• M. Si, A. Charnas, Z. Lin, and P. D. Ye, “Enhancement-Mode Atomic-Layer-Deposited In₂O₃ Transistors with Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment,” IEEE Trans. Electron Devices, vol. 68, no. 3, pp. 1075-1080, 2021. PDF

2020

• M. Si, Y. Hu, Z. Lin, X. Sun, A. Charnas, D. Zheng, X. Lyu, H. Wang, K. Cho, and P. D. Ye, “Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors?” Nano Lett., vol. 21, no. 1, pp. 500-506, 2021. PDF Supplement
• M. Si, Z. Lin, A. Charnas, and P. D. Ye, “Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V,” IEEE Electron Device Lett., vol. 42, no. 2, pp. 184-187, 2021. PDF
• A. K. Saha, M. Si, K. Ni, S. Datta, P. D. Ye, and S. K. Gupta, “Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis,” in 2020 IEEE International Electron Devices Meeting (IEDM), 2020, pp. 63-66. PDF
• A. K. Saha, M. Si, P. D. Ye, and S. K. Gupta, “α-In₂Se₃ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories,” Appl. Phys. Lett., vol. 117, no. 18, p. 183504, 2020. PDF
• Y. Qu, J. Li, M. Si, X. Lyu, and P. D. Ye, “Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method,” IEEE Trans. Electron Devices, vol. 67, no. 12, pp. 5315-5321, 2020. PDF
• M. Si, Z. Lin, J. Noh, J. Li, W. Chung, and P. D. Ye, “The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistor,” IEEE J. Electron Devices Soc., vol. 8, pp. 864-849, 2020. PDF
• M. Si, J. Andler, X. Lyu, C. Niu, S. Datta, R. Agrawal, and P. D. Ye, “Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating,” ACS Nano, vol. 14, no. 8, pp. 11542-11547, 2020. PDF Supplement
• S. M. Neumayer, L. Tao, A. O'Hara, J. Brehm, M. Si, P.-Y. Liao, T. Feng, S. V. Kalinin, P. D. Ye, S. T. Pantelides, P. Maksymovych, and N. Balke, “Alignment of Polarization against an Electric Field in van der Waals Ferroelectrics,” Phys. Rev. Appl., vol. 15, no. 6, p. 064063, 2020. PDF
• G. Qiu, C. Niu, Y. Wang, M. Si, Z. Zhang, W. Wu, and P. D. Ye, “Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene,” Nat. Nanotechnol., vol. 15, pp. 585-591, 2020. PDF
• C. Niu, G. Qiu, Y. Wang, Z. Zhang, M. Si, W. Wu, and P. D. Ye, “Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization,” Phys. Rev. B, vol. 101, no. 20, p. 205414, 2020. PDF
• J.-K. Qin, P.-Y. Liao, M. Si, S. Gao, G. Qiu, J. Jian, Q. Wang, S.-Q. Zhang, S. Huang, A. Charnas, Y. Wang, M. J. Kim, W. Wu, X. Xu, H.-Y. Wang, L. Yang, Y. K. Yap, and P. D. Ye, “Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes,” Nat. Electron., vol. 3, pp. 141-147, 2020. PDF
• S. Alghamdi, M. Si, H. Bae, H. Zhou, and P. D. Ye, “Single Pulse Charge Pumping Measurements on GaN MOS-HEMTs: Fast and Reliable Extraction of Interface Traps Density,” IEEE Trans. Electron Devices, vol. 67, pp. 444-448, 2020. PDF
• Y. He, B. Bahr, M. Si, P. D. Ye, and D. Weinstein, “A Tunable Ferroelectric Based Unreleased Radio Frequency (RF) Resonator,” Microsystems & Nanoengineering, vol. 6, no. 8, pp. 1-7, 2020. PDF
• J. Li, Y. Qu, M. Si, X. Lyu, and P. D. Ye, “Multi-Probe Characterization of Ferroelectric/Dielectric Interface by C-V, P-V and Conductance Methods,” in 2020 IEEE Symposium on VLSI Technology (VLSI), 2020, p. TF2.6. PDF

2019

• M. Si, Y. Luo, W. Chung, H. Bae, D. Zheng, J. Li, J. Qin, G. Qiu, S. Yu, and P. D. Ye, “A Novel Scalable Energy-Efficient Synaptic Device: Crossbar Ferroelectric Semiconductor Junction,” in 2019 IEEE International Electron Devices Meeting (IEDM), 2019, pp. 130-133. PDF
• X. Lyu, M. Si, P. R. Shrestha, K. P. Cheung and P. D. Ye, “First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide,” in 2019 IEEE International Electron Devices Meeting (IEDM), 2019, pp. 342-345. PDF
• H. Bae, A. Charnas, X. Sun, J. Noh, M. Si, W. Chung, G. Qiu, X. Lyu, S. Alghamdi, H. Wang, D. Zemlyanov, and P. D. Ye, “Solar-blind UV photodetector based on atomic layer deposited Cu₂O and nano-membrane β-Ga₂O₃ pn oxide heterojunction,” ACS Omega, vol. 4, no. 24, pp. 20756-20761, 2019. PDF
• M. Si, A. K. Saha, S. Gao, G. Qiu, J. Qin, Y. Duan, J. Jian, H. Wang, W. Wu, S. K. Gupta, and P. D. Ye, “A Ferroelectric Semiconductor Field-Effect Transistor,” Nat. Electron., vol. 2, pp. 580-586, 2019. PDF Supplement
• M. Si, A. K. Saha, P.-Y. Liao, S. Gao, S. M. Neumayer, J. Jian, J. Qin, N. Balke, H. Wang, P. Maksymovych, W. Wu, S. K. Gupta, and P. D. Ye, “Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid State Refrigeration,” ACS Nano, vol. 13, no. 8, pp. 8760-8765, 2019. PDF
• M. Si, X. Lyu, P. Shrestha, X. Sun, H. Wang, K. P. Cheung, and P. D. Ye, “Ultrafast Measurements of Polarization Switching Dynamics on Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide,” Appl. Phys. Lett., vol. 115, p. 072107, 2019. PDF
• J. Noh, S. Alajlouni, M. J. Tadjer, J. C. Culbertson, M. Si, H. Zhou, P. A. Bermel, A. Shakouri, and P. D. Ye, “High Performance β-Ga₂O₃ Nano-membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate,” IEEE J. Electron Devices Soc., vol. 7, pp. 914-918, 2019. PDF
• W. Chung, H. Wu, W. Wu, M. Si, and P. D. Ye, “Experimental Extraction of Ballisticity in Germanium Nanowire NMOSFETs,” IEEE Trans. Electron Devices, vol. 66, no. 8, pp. 3541-3548, 2019. PDF
• M. Si, X. Lyu, and P. D. Ye, “Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack,” ACS Appl. Electron. Mater., vol. 1, no. 5, pp. 745-751, 2019. PDF Supplement
• M. A. Alam*, M. Si*, and P. D. Ye*, “Recent Progress on Negative Capacitance Field-Effect Transistors: A Critical Review (Invited),” Appl. Phys. Lett., vol. 114, p. 090401, 2019. PDF
• J. Qin, H. Yan, G. Qiu, M. Si, P. Miao, Y.-Q. Duan, W.-Z. Shao, L. Zhen, C.-Y. Xu, and P. D. Ye, “Hybrid dual-channel phototransistor based on mixed-dimensional 1D t-Se and 2D ReS₂ heterojunction,” Nano Res., vol. 12, no. 3, pp. 669-674, 2019. PDF
• X. Lyu, M. Si*, X. Sun, M. A. Capano, H. Wang, and P. D. Ye*, “Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density,” in 2019 IEEE Symposium on VLSI Technology (VLSI), 2019, pp. 44-45. PDF

2018

• W. Chung, M. Si, and P. D. Ye, “First Demonstration of Germanium Ferroelectric Nanowire FET with high on/off ratio and Conductance States as Synaptic Device for On-chip Deep Neural Network,” in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 344-347. PDF
• J. Qin, G. Qiu, W. He, J. Jian, M. Si, Y. Duan, H. Wang, W. Zhao, L. Zhen, C. Xu, and P. D. Ye, “Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS₂ for High-Performance Photodetectors,” Adv. Funct. Mater., vol. 28, no. 48, p. 1806254, 2018. PDF
• H. Bae, J. Noh, S. Alghamdi, M. Si, and P. D. Ye, “Ultraviolet Light-based Current-Voltage Method for Simultaneous Extraction of Donor- and Acceptor-like Interface Traps in β-Ga₂O₃ FETs,” IEEE Electron Device Lett., vol. 39, no. 11, pp. 1708-1711, 2018. PDF
• M. Si†, P.-Y. Liao†, G. Qiu, Y. Duan, and P. D. Ye, “Ferroelectric Field-effect Transistors Based on MoS₂ and CuInP₂S₆ Two-dimensional Van der Waals Heterostructure,” ACS Nano, vol. 12, no. 7, pp. 6700-6705, 2018. PDF
• M. Si, W. Chung, Y. Du, and P. D. Ye, “Steep-slope Negative Capacitance WSe₂ Field-Effect Transistor,” Nano Lett., vol. 18, no. 6, pp. 3682-3687, 2018. PDF
• W. Wu, H. Wu, W. Sun, M. Si, N. Conrad, Y. Zhao, and P. D. Ye, “Mobility Fluctuation Induced Low Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs with Near-Ballistic Transport,” IEEE Trans. Electron Devices, vol. 65, no. 6, pp. 2573-2577, 2018. PDF
• H. Tian, W. Ahn, K. Maize, M. Si, P. D. Ye, M. A. Alam, A. Shakouri and P. Bermel, “Thermoreflectance Imaging of Electromigration Evolution in Asymmetric Aluminum Constrictions,” J. Appl. Phys., vol. 123, no. 3, p. 035107, 2018. PDF
• C. Jiang, M. Si, R. Liang, J. Xu, P. D. Ye and M. A. Alam, “A Closed Form Analytical Model of Back-Gated 2D Semiconductor Negative Capacitance Field Effect Transistors,” IEEE J. Electron Devices Soc., vol. 6, no. 1, pp. 189-194, 2018. PDF
• W. Wu, H. Wu, J. Zhang, M. Si, Y. Zhao, and P. D. Ye, “Carrier Mobility Enhancement by Applying Back-Gate Bias in Ge-on-Insulator MOSFETs,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 176-179, 2018. PDF
• W. Chung, M. Si, P. R. Shrestha, J. P. Campbell, K. P. Cheung, and P. D. Ye, “First Direct Experimental Studies of Hf_0.5Zr_0.5O₂ Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs (Late News),” in 2018 IEEE Symposium on VLSI Technology (VLSI), 2018, pp. 89-90. PDF

2017 and Early

• M. Si, C. Jiang, N. J. Conrad, H. Zhou, K. Maize, G. Qiu, C.-T. Wu, A. Shakouri, M. A. Alam, and P. D. Ye, “Steep Slope Hysteresis-free Negative Capacitance MoS₂ Transistors,” Nat. Nanotechnol., vol. 13, pp. 24-28, 2018. PDF Supplement
• M. Si, C. Jiang, C.-J. Su, Y.-T. Tang, L. Yang, W. Chung, M. A. Alam and P. D. Ye, “Sub-60 mV/dec Ferroelectric HZO MoS₂ Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance,” in 2017 IEEE International Electron Devices Meeting (IEDM), 2017, pp. 573-576. PDF
• W. Chung, M. Si, and P. D. Ye, “Hysteresis-free Negative Capacitance Germanium CMOS FinFETs with Bi-directional Sub-60 mV/dec,” in 2017 IEEE International Electron Devices Meeting (IEDM), 2017, pp. 365-368. PDF
• M. Si, L. Yang, H. Zhou, and P. D. Ye, “β-Ga₂O₃ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications,” ACS Omega, vol. 2, no. 10, pp. 7136-7140, 2017. PDF
• Y. Du, G. Qiu, Y. Wang, M. Si, X. Xu, W. Wu, and P. D. Ye, “1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport,” Nano Lett., vol. 17, no. 6, pp. 3965-3973, 2017. PDF
• S. Ren, M. A. Bhuiyan, J. Zhang, X. Lou, M. Si, X. Gong, R. Jiang, K. Ni, X. Wan, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. D. Ye and T.-P. Ma, “Total Ionizing Dose (TID) Effects in GaAs MOSFETs with La-Based Epitaxial Gate Dielectrics,” IEEE Trans. Nucl. Sci., vol. 64, no. 1, pp. 164-169, 2017. PDF
• S.-J. Chang, H. Zhou, N. Gong, D.-M. Kang, J.-W. Lim, M. Si, P. D. Ye, and T. P. Ma, “Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor,” IEEE Electron Device Lett., vol. 38, no. 4, pp. 441-444, 2017. PDF
• H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, and P. D. Ye, “High-Performance Depletion/Enhancement-mode β-Ga₂O₃ on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm,” IEEE Electron Device Lett., vol. 38, no. 1, pp. 103-106, 2017. PDF
• L. Yang, G. Qiu, M. Si, A. R. Charnas, C. A. Milligan, D. Y. Zemlyanov, H. Zhou, Y. Du, Y. M. Lin, W. Tsai, Q. Paduano, and P. D. Ye, “Few-Layer Black Phosphorus PMOSFETs with BN/Al₂O₃ Bilayer Gate Dielectric: Achieving I_on=850 µA/µm, g_m=340 µS/µm and R_c=0.58 kΩ·µm,” in 2016 IEEE International Electron Devices Meeting (IEDM), 2016, pp. 127-130. PDF
• H. Zhou, X. Lou, N. J. Conrad, M. Si, H. Wu, S. Alghamdi, S. Guo, R. G. Gordon, and P. D. Ye, “High Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric,” IEEE Electron Device Lett., vol. 37, no. 5, pp. 556-559, 2016. PDF
• X. Li, Y. Du, M. Si, L. Yang, S. Li, T. Li, X. Xiong, P. D. Ye, and Y. Wu, “Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors,” Nanoscale, vol. 8, pp. 3572-3578, 2016. PDF
• H. Wu, W. Wu, M. Si, and P. D. Ye, “Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling,” IEEE Trans. Electron Devices, vol. 63, no. 8, pp. 3049-3057, 2016. PDF
• H. Zhou, S. Alghmadi, M. Si, G. Qiu, and P. D. Ye, “Al₂O₃/β-Ga₂O₃ Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing,” IEEE Electron Device Lett., vol. 37, no. 11, pp. 1411-1414, 2016. PDF
• W. Wu, H. Wu, M. Si, N. Conrad, Y. Zhao, and P. D. Ye, “RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs,” in 2016 IEEE Symposium on VLSI Technology (VLSI), 2016, pp. 978-979. PDF
• H. Wu, W. Wu, M. Si, and P. D. Ye, “First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest g_max of 1057 µS/µm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters,” in 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp. 16-19. PDF
• J. Zhang, M. Si, X. B. Lou, W. Wu, R. G. Gordon, and P. D. Ye, “InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching,” in 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp. 12-15. PDF
• M. Si, N. J. Conrad, S. Shin, J. Gu, J. Zhang, M. A. Alam, and P. D. Ye, “Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs,” IEEE Trans. Electron Devices, vol. 62, no. 11, pp. 3508-3515, 2015. PDF
• X. Li, L. Yang, M. Si, S. Li, M. Huang, P. D. Ye, and Y. Wu, “Performance Potential and Limit of MoS₂ Transistors,” Adv. Mater., vol. 27, no. 9, pp. 1547-1552, 2015. PDF
• S. Shin, M. A. Wahab, M. Masuduzzaman, K. Maize, J. Gu, M. Si, A. Shakouri, P. D. Ye, and M. A. Alam, “Direct observation of self-heating in III-V gate-all-around nanowire MOSFETs,” IEEE Trans. Electron Devices, vol. 62, no. 11, pp. 3516-3523, 2015. PDF
• J. Zhang, X. Lou, M. Si, H. Wu, J. Shao, M. J. Manfra, R. G. Gordon, and P. D. Ye, “Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate,” Appl. Phys. Lett., vol. 106, no. 7, p. 073506, 2015. PDF
• H. Wu, M. Si, L. Dong, J. Gu, J. Zhang, and P. D. Ye, “Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm,” IEEE Trans. Electron Devices, vol. 62, no. 5, pp. 1419-1426, 2015. PDF
• S. Ren, M. Si, K. Ni, X. Wan, J. Chen, S. Chang, X. Sun, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, S. Cui, and T. P. Ma, “Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2888-2893, 2015. PDF
• H. Wu, W. Luo, H. Zhou, M. Si, J. Zhang, and P. D. Ye, “First experimental demonstration of Ge 3D FinFET CMOS circuits,” in 2015 IEEE Symposium on VLSI Technology (VLSI), 2015, pp. T58-T59. PDF
• H. Wu, W. Luo, M. Si, J. Zhang, H. Zhou, and P. D. Ye, “Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel,” in 2014 IEEE International Electron Devices Meeting (IEDM), 2014, pp. 16-17. PDF
• N. Conrad, M. Si*, S. H. Shin, J. J. Gu, J. Zhang, M. A. Alam, and P. D. Ye*, “Low-frequency noise and RTN on near-ballistic III-V GAA nanowire MOSFETs,” in 2014 IEEE International Electron Devices Meeting (IEDM), 2014, pp. 502-505. PDF
• H. Liu, A. T. Neal, M. Si, Y. Du, and P. D. Ye, “The effect of dielectric capping on few-layer phosphorene transistors: tuning the Schottky barrier heights,” IEEE Electron Device Lett., vol. 35, no. 7, pp. 795-797, 2014. PDF
• H. Wu, M. Si, L. Dong, J. Zhang, and P. D. Ye, “Ge CMOS: Breakthroughs of nFETs (I_max= 714 mA/mm, g_max= 590 mS/mm) by recessed channel and S/D,” in 2014 IEEE Symposium on VLSI Technology (VLSI), 2014, pp. 1-2. PDF
• S. Shin, M. Masuduzzaman, J. J. Gu, M. A. Wahab, N. Conrad, M. Si, P. D. Ye, and M. Alam, “Impact of Nanowire Variability on Performance and Reliability of Gate-all-around III-V MOSFETs,” in 2013 IEEE International Electron Devices Meeting (IEDM), 2013, pp. 189-191. PDF
• M. Si, J. J. Gu, X. Wang, J. Shao, X. Li, M. J. Manfra, R. G. Gordon, and P. D. Ye, “Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 102, no. 9, p. 093505, 2013. PDF
• H. Liu, M. Si, S. Najmaei, A. T. Neal, Y. Du, P. M. Ajayan, J. Lou, and P. D. Ye, “Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films,” Nano Lett., vol. 13, no. 6, pp. 2640-2646, 2013. PDF
• H. Liu, M. Si, Y. Deng, A. T. Neal, Y. Du, S. Najmaei, P. M. Ajayan, J. Lou, and P. D. Ye, “Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers,” ACS Nano, vol. 8, no. 1, pp. 1031-1038, 2013. PDF
• N. Conrad, S. Shin, J. Gu, M. Si, H. Wu, M. Masuduzzaman, M. Alam, P. D. Ye, and others, “Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs,” IEEE Trans. Device Mater. Reliab., vol. 13, no. 4, pp. 489-496, 2013. PDF
• Y. Du, H. Liu, A. T. Neal, M. Si, and P. D. Ye, “Molecular Doping of Multilayer Field-Effect Transistors: Reduction in Sheet and Contact Resistances,” IEEE Electron Device Lett., vol. 34, no. 10, pp. 1328-1330, 2013. PDF
• Q. Cui, M. Si, R. A. Sporea, and X. Guo, “Simple noise margin model for optimal design of unipolar thin-film transistor logic circuits,” IEEE Trans. Electron Devices, vol. 60, no. 5, pp. 1782-1785, 2013. PDF